Conductivity Type

n-type

p-type

Growth method / Dopant

LEC/S

LEC/Si

LEC/Zn

Carrier concentration (cm^-3)

*(1>÷20) x 10¹⁷

(1÷10) x 10¹⁸

Resistivity (Ω x cm)

0,250÷0,100

0,04÷0,02

Mobility (cm²/V x sec)

150÷101

≥40

EPD average (cm^-2)

≤1 x 10⁵

Diameter (mm)**

50.8±0.2

Standard thickness ** (*m)

290±10

Orientation**

(111)

Surface quality

front side - as cut
back side - as cut

Bow

<10

TTV

<10

Conductivity Type

n-type

Growth method / Dopant

LEC/S

Carrier concentration (cm^-3)

(5÷20) x 10¹⁷

Resistivity (Ω x cm)

0.10÷0.04

Mobility (cm²/V x sec)

≥50

EPD average (cm^-2)

≤1 x 10⁵

Diameter (mm)*

50.8±0.2

76.2±0.2

Standard thickness * (*m)

300±20

350±20

Orientation*

(100)***

Surface quality

front side - epi-ready
back side - as cut/polished

Bow

<10

<15

TTV

<7

<15

Conductivity Type

n-type

Growth method / Dopant

LEC/undoped

Carrier concentration (cm^-3)

<2 x 10¹⁶

Mobility (cm²/V x sec)

≥180

EPD average (cm^-2)

≤2 x 10⁵

Absorption coefficient (cm-1)

1.93 (D=580 nm)

Diameter (mm)*

50.8±0.2

76.2±0.2

Standard thickness * (*m)

≥300

≥500

Orientation

(100)/(111)

Surface quality

front side - optically polished/as cut
back side - optically polished/as cut

Conductivity Type

i-type

Growth method / Dopant

LEC/Cr/Ni/Mn

Resistivity (Ω x cm)

≥10⁶

EPD average (cm^-2)

≤2 x 10⁵

Diameter (mm)

50.8±0.2

76.2±0.2

Standard thickness * (*m)

300±20

350±20

Orientation

(100)/(111)

Mis-orientation

0-10o toward any plane upon request

0-5o toward any plane upon request

Surface quality

front side - epi-ready
back side - as cut/polished

Bow

<10

<15

TTV

<10

<15