Silicon Carbide MOSFET

N-Channel Enhancement Mode

Features

G3R' Technology with +15 V Gate Drive

Softer Rps(oN) v/s Temperature Dependency

LoRing" -Electromagnetically Optimized Design

Smaller Rc(in) and Lower Qc

Low Device Capacitances (Coss, Ckss)

Superior Cost-Performance lndex

Robust Body Diode with Low V and Low QRR

Industry-Leading UlL & Short-Circuit Robustness

Advantages

Compatible with Commercial Gate Drivers

Low Conduction Losses at all lemperatures

Reduced Ringing

Faster and More Efficient Switching

Lesser Switching Spikes and Lower Losses

Better Power Density and System Efficiency

Ease of Paralleling without Thermal Runaway

Higher System Reliability

Applications

? Solar Inverter
? EV Fast Charging
? Switched Mode Power Supply (SMPS)
? Auxiliary Power Supply

? High Voltage Converter

? Pulsed Power